
Scientific Achievement: Accurate many-body calculations predict a disorder transition in MnBi₂Te₄ involving Bi(Mn) antisites well below its synthesis temperature.
Significance and Impact: Work explains the experimental difficulties in obtaining defect-free MnBi₂Te₄, a layered magnetic topological insulator with potential for next-generation quantum devices.
DOI: 10.1038/s41524-026-02019-8
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