Publications

Showing 11 results for Author: Sujoy Ghosh

View All publications

Sep, 2026

Conference Paper

Temperature-Dependent Transport Characteristics of 2D MoS2 Channel FETs Grown Using Salt-Based Precursors

D Transition Metal Dichalcogenides (TMDs), particularly MoS2, are promising candidates for sub-10 nm Gate All Around (GAA) CMOS FETs. Salt-assisted Chemical Vapor Deposition (CVD) enable lateral MoS2 growth at atmospheric pressure and low temperatures. This work analyzes salt-based precursor-driven CVD-grown MoS2 FETs at various temperatures. MoS2 was grown using Ammonium…
Jun, 2026

Journal

Probing boron vacancy defects in hBN via single spin relaxometry

Spin defects in solids offer promising platforms for quantum sensing and memory due to their long coherence times and optical addressability. Here, we integrate a single nitrogen-vacancy (NV) center in diamond with scanning probe microscopy to detect, read out, and spatially map spin-based quantum sensors at the nanoscale. Using the boron vacancy (V-B) center in hexagonal…
Jun, 2026

Journal

Reactive Oxygen Ion Beam-Induced Deposition for Concurrent Purification of Platinum Nanostructures

Oxygen-focused ion beam induced deposition (O-FIBID) enables the direct-write fabrication of Pt nanostructures while simultaneously enhancing purity concurrently through reactive oxygen–deposit interactions. By systematically varying the dwell time, accelerating voltage, and precursor pressure, the Pt content and conductivity can be controlled. Under optimum conditions, th…
Jun, 2026

Journal

Evidence of Chiral Fermion Edge Modes through Geometric Engineering of Thermal Hall Effect in 𝛼−RuCl3

The experimental observation of half-integer-quantized thermal Hall conductivity in the Kitaev candidate material α-RuCl3 has served as a signature of non-Abelian anyons through an associated chiral Majorana edge mode. However, both the reproducibility of the quantized thermal Hall conductivity and the fundamental nature of the associated heat carriers, whether bosonic or…
Dec, 2025

Journal

Defect Engineering in Large-Scale CVD-Grown Hexagonal Boron Nitride: Formation, Spectroscopy, and Spin Relaxation Dynamics

Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation of desirable defect types in scalable hBN films remains a significant challenge. Here, it is demonstrated that formation of negative bo…
Nov, 2025

Journal

Encapsulation of monolayer 2D materials using kinetic energy-controlled pulsed laser deposition

The integration of monolayer (ML) two-dimensional (2D) materials into next-generation microelectronics, optoelectronics, and sensors is hindered by their sensitivity to environmental exposure. Deposition of additional layers for encapsulation or growth on ML 2D materials by versatile but energetic plasma techniques such as pulsed laser deposition (PLD) has not been conside…
Oct, 2025

Journal

Next-generation electronics by co-design with chalcogenide materials

As Moore’s law approaches its limits, chalcogenides offer a promising route to next-generation computing and sensing, thanks to their topological, magnetoelectric, excitonic, and spintronic properties. Yet the same traits that make them appealing, e.g., exotic properties at monolayer thickness, clean van der Waals interfaces, and strong many-body effects, also heighten sen…
Aug, 2025

Journal

Focused Helium Ion Beam for Direct Patterning of Monolayer MoS2 Nanoribbon Field Effect Devices

The helium ion microscope (HIM) focused ion beam (FIB) has emerged as a powerful tool to directly pattern nanostructures below 10 nm due to its high-resolution capabilities and the inert nature of the ion source. These attributes make HIM FIB particularly interesting for patterning 2D materials such as transition metal dichalcogenides (TMDs) to investigate transport phenom…
Aug, 2025

Journal

Raman Laser-Induced Structural Modification in CVD-Grown Monolayer MoS2 for Multi-Purposed Nanofabrication

Molybdenum disulfide (MoS2) has been extensively explored to be utilized as an electronic material in a variety of device applications. In particular, the tunability of MoS2 enhances its electrical properties making it an intriguing candidate for field-effect transistors (FETs), while also extending beyond electrical properties to structural phase engineering. Laser-induce…
Aug, 2024

Journal

Covalently-Bonded Laminar Assembly of Van der Waals Semiconductors with Polymers: Toward High-Performance Flexible Devices

Van der Waals semiconductors (vdWS) offer superior mechanical and electrical properties and are promising for flexible microelectronics when combined with polymer substrates. However, the self-passivated vdWS surfaces and their weak adhesion to polymers tend to cause interfacial sliding and wrinkling, and thus, are still challenging the reliability of vdWS-based flexible d…
Jul, 2024

Journal

Selected Area Manipulation of MoS2 via Focused Electron Beam-Induced Etching for Nanoscale Device Editing

We demonstrate direct-write patterning of single and multilayer MoS2 via a focused electron beam-induced etching (FEBIE) process mediated with the XeF2 precursor. MoS2 etching is performed at various currents, areal doses, on different substrates, and characterized using scanning electron and atomic force microscopies as well as Raman and photoluminescence spectroscopies.…

Explore

Quantum

AI

Reactors

Fuel Cycle

Materials

Resources for Biology

Neutrons

Publications

Temperature-Dependent Transport Characteristics of 2D MoS2 Channel FETs Grown Using Salt-Based Precursors

Probing boron vacancy defects in hBN via single spin relaxometry

Reactive Oxygen Ion Beam-Induced Deposition for Concurrent Purification of Platinum Nanostructures

Evidence of Chiral Fermion Edge Modes through Geometric Engineering of Thermal Hall Effect in 𝛼−RuCl3

Defect Engineering in Large-Scale CVD-Grown Hexagonal Boron Nitride: Formation, Spectroscopy, and Spin Relaxation Dynamics

Encapsulation of monolayer 2D materials using kinetic energy-controlled pulsed laser deposition

Next-generation electronics by co-design with chalcogenide materials

Focused Helium Ion Beam for Direct Patterning of Monolayer MoS2 Nanoribbon Field Effect Devices

Raman Laser-Induced Structural Modification in CVD-Grown Monolayer MoS2 for Multi-Purposed Nanofabrication

Covalently-Bonded Laminar Assembly of Van der Waals Semiconductors with Polymers: Toward High-Performance Flexible Devices

Selected Area Manipulation of MoS2 via Focused Electron Beam-Induced Etching for Nanoscale Device Editing