- By:
- Chinthavali, Madhu Sudhan ; Tolbert, Leon M; Ning, Puqi
- Page Number:
- 1-1083
- Issue Number:
- 2
- Book Title:
- Proceedings of APEC
- Publication Date:
- March 12, 2026
- Publisher Location:
- IEEE, New Jersey, United States of America
- Conference Name:
- The Applied Power Electronics Conference and Exposition
- Conference Location:
- Dallas, Texas, United States of America
Abstract
This paper presents an analysis of single discrete SiC JFET and BJT devices and their parallel operation. The static and dynamic characteristics of the devices were obtained over a wide range of temperature to study the scaling of device parameters.
