- By:
- Liao, Ke; Yin, Bo; Pan, Yue; Chen, Long; liu, Chen; Wu, Yan ; Do, Seunghwan ; Gao, Yifan; Yang, Yaling; Wang, Yulong; Xuhui, Wang; Li, Ying; Guo, Zhongnan; Liu, Junwei; Wang, Jiaou; Su, Dong; Ma, Jie; Wu, Quansheng; Wang, Gang
- Journal Name:
- Journal of American Chemical Society
- Volume:
- TBD
- Publication Date:
- January 9, 2026
- View DOI Listing:
- https://doi.org/10.1021/jacs.5c13595
Abstract
Magnetism in van der Waals semiconductors offers significant potential for fundamental research on low-dimensional magnetism and the development of high-performance two-dimensional spintronic devices. Here, we report the growth, physical properties, and first-principles calculations of a new dual-octahedral transition metal chalcogenide (DTMC) MnSi2Te4. MnSi2Te4 features a layered structure with an intralayer heterostructure, where the metal octahedra and nonmetal dimeric octahedra form zigzag chains alternately. Property characterization reveals that MnSi2Te4 is a collinear G-type antiferromagnetic semiconductor, with a Néel temperature TN of 18.6 K and a significant unsaturated negative magnetoresistance (NMR) reaching −42.5% at 9 T and 100 K. First-principles calculations on the electronic band structure demonstrate that the large NMR primarily originates from the spin splitting due to parity-time symmetry breaking. This study not only discovers a new member of DTMCs with a unique crystal structure and large NMR, but also establishes a promising platform for investigating next-generation spintronic devices.
