- By:
- Yang, Fei; Wang, Zhiqiang ; Zhang, Zheyu; Campbell, Steven L; Wang, Fei ; Chinthavali, Madhu Sudhan
- Page Number:
- 1742-1749
- Book Title:
- 2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
- Publication Date:
- March 12, 2026
- Publisher Location:
- IEEE, New Jersey, United States of America
- Conference Name:
- 2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
- Conference Location:
- San Antonio, Texas, United States of America
- Conference Sponsor:
- IEEE Industry Applications Society; IEEE Power Electronics Society; Power Sources Manufacturers Association
- View DOI Listing:
- https://doi.org/10.1109/APEC.2018.8341253
Abstract
Middle-point inductance L_middle can be introduced in power module designs with P-cell/N-cell concept. In this paper, the effect of middle-point inductance on switching transients is analyzed first using frequency domain analysis. Then a dedicated multiple-chips power module is fabricated with the capability of varying L_middle, and extensive switching tests are conducted to evaluate the device’s switching performance at different L_middle. Experiment results show that as L_middle changes, different voltage stresses are imposed on the active switch and anti-parallel diode. For lower MOSFET’s turn-off, as L_middle goes up, the maximum voltage of lower MOSFET increases; however, the maximum voltage of anti-parallel diode decreases significantly. In addition to voltage spikes, it is observed that the active MOSFET’s turn-on loss will decrease at higher values of L_middle while its turn-off loss will increase. Detailed analysis of this loss variation is presented. The analysis and experiment results will provide design guidelines for multiple-chips power module package design with P-cell/N-cell concept.
