- By:
- Porter, Matthew; Ma, Yunwei; Qin, Yuan; Srijanto, Bernadeta R; Briggs, Dayrl P; Kravchenko, Ivan I; Zhang, Yuhao
- Page Number:
- 331-334
- Book Title:
- 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Publication Date:
- March 12, 2026
- Publisher Location:
- IEEE, New Jersey, United States of America
- Conference Name:
- 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Conference Location:
- Bremen, Germany
- Conference Sponsor:
- University of Bremen
- View DOI Listing:
- https://doi.org/10.1109/ISPSD59661.2024.10579650
Abstract
The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.
