Nanoscale Electrical Memory Effects in layered 2D Materials
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Nanoscale Electrical Memory Effects in layered 2D Materials

Nanoscale Electrical Memory Effects in layered 2D Materials
(A) AFM height image of PdSe2 nanosheets and stack. (B) Simultaneously measured C(V) and R(V) curves. (C) Capacitance difference between charge accumulation and inversion calculated from C(V) curves. (D) Remanent resistivity obtained from R(V) related to memristive properties.

Scientific Achievement

Nanoscale electrical probing reveals enhanced memcapacitive and memristive properties in stacked nanosheets of PdSe2.

Significance and Impact

Switchable electrical states are fundamental to energy-efficient neuromorphic hardware elements

Research Details

  • Demonstrated nanoscale electrical characterization of semiconductors based on atomic force microscopy.
  • Enhanced resistive and capacitive switching was found in stacked PdSe2 nanosheets due to trapped charge carriers at the interface. Unexpected local p-type semiconducting behavior was detected that provides further tunability.

Neumayer, et al., ACS Applied Materials & Interfaces 16, 3665 (2024). DOI: 10.1021/acsami.3c14427

Work performed at the Center for Nanophase Materials Sciences

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